Change of electrical characteristics of a p-type MOSFET via hydrogen effect on boron redistribution

We present a hydrogen-assisted enhanced boron diffusion model in oxide. By introducing the B+OH reaction and BOH diffusion, the model could reproduce the enhanced B diffusion in the presence of high concentrations of hydrogen, which has been reported by previous studies. The model was applied to predict the B profile in the p-type MOSFET and the resulting B profiles were used to predict the threshold voltage (Vth) and the short channel effects (SCE). The simulation results are in good agreement with the measurements. Therefore, the model would be beneficial to optimize the H-involved process conditions.