Serialized Stepwise Parameter Calibration Strategy for a Compact Transient Switching Model of PCMO RRAM

PCMO RRAM, a type of non-filamentary bulk switching RRAM demonstrates complex switching transients from fast (ns) to long (s) time range. A reaction-drift phenomena with self-heating-based switching model has been proposed earlier, along with space charge-limited carrier conduction from TCAD. In this work, a complete and circuit-ready conduction + switching model in Verilog-A has been proposed using shallow trap assumption based analytical solution. Further, a stepwise method to uniquely calculate the physical parameters of the multiple equations involved in the self-consistent solution is proposed for the Set and Reset processes. The obtained parameters agree well with the parameters reported using electrical or material characterization.