Effect of Si Separator in Forksheet FETs on Device Characteristics Investigated by Using In-House TCAD Process Emulator and Device Simulator

In this work, we investigate the effect of a Si separator on the performance of a bottom dielectric isolated (BDI) forksheet field effect transistor (FSFET) using our in-house TCAD process emulator and device simulator. The in-house process emulator is implemented with the 3D multi-level-set method and the relevant fabrication process is followed. Two versions of the BDI FSFET with and without a Si separator are generated and the one with a Si separator shows a better etch profile. The electrical characteristics of each device are simulated through our in-house device simulator, G-Device. From the simulation results, it is clearly demonstrated that the electrical characteristics of the FSFET with a BDI are negligibly affected by the Si separator, when the Si separator is very thin.