A 2.5 Gbps CMOS laser diode driver with preemphasis technique

This paper describes the design of a 2.5 Gbps laser diode (LD) driver circuit in a 0.35/spl mu/m digital CMOS process. The LD driver delivers a biased current range from 5 to 10 mA and a modulation current of 20 mA. The biased current is programmable by a 3-bit D/A. High current driving capability as well as agile switching speed are achieved by inductive peaking and preemphasis techniques. Operating under a single 3 V power supply, the maximum power consumption is 150 mW. Chip size is 1200/spl mu/m /spl times/ 900/spl mu/m.