Silicon microcavity based on 1-D photonic bandgap structure

Summary form only given. We have demonstrated that a-SiN/sub x/:H microcavities with DBR mirrors can be successfully realized by PECVD, and can be used for the control of the photoluminescence (PL) in a-SiN/sub x/:H. The PL of the a-SiNx:H is both narrowed and enhanced at the microcavity resonance with respect to the PL of the bulk a-SiNx:H. This narrowing and enhancement of the PL can be understood by the redistribution of the density of optical modes due to the presence of the microcavity. The microcavity narrowing and enhancement of luminescence in a-SiN/sub x/:H opens up a variety of possibilities for optoelectronic applications such as resonant cavity enhanced light emitting diodes.