Reduced Porous Graphene Oxide Network as High-performance Supercapacitor Electrodes: Effect of Reduction Temperature

Graphene oxide (GO) is a highly promising material for supercapacitors. The presence of oxygen functional group on the GO surface changes its electronic property, which defines the supercapacitor performance. Controlling the reduction temperature at ambient conditions is an easy way to influence the property of GO and improve the performance of the supercapacitor electrode. This ambient controlled reduction is helpful in scaleup the production and commercialization. Here GO, rGO-1 (200 °C), and rGO-2 (300 °C), rGO-3 (400 °C) is synthesized and their structural and electrochemical property is studied. 400 °C reduced GO (rGO 3) shows a higher specific capacitance (C) of 276 F/g compared to GO, rGO-1, and rGO-2 with a specific capacitance of 98 F/g, 107 F/g, 164 F/g at a current density of 0.5A/g. The enhancement in performance of rGO-3 is due to improved electronic properties after thermal reduction. This ambient reduced GO serve as an excellent material for supercapacitor application.