Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiC

The improvement of crystal quality in recent years thanks to the advanced fabrication technology development of silicon carbide (SiC) in power electronics, enables the control of optically active defects in SiC, such as silicon vacancies $(V_{Si})$. In this paper, $V_{Si}$ are created in hexagonal 6H-SiC samples by ion implantation of aluminum or boron, the standard p-type dopants for SiC. Cathodoluminescence (CL) is used to identify the generation of $V_{Si}$ in SiC after ion implantation. Damage of the implanted samples is analyzed by Raman spectroscopy and RBS/C.