Demonstration of High Avalanche Capability in 1200 V-Rated SiC Junction Barrier Schottky Diodes With Record Avalanche Energy Density

In this letter, high-performance 4H-SiC junction barrier Schottky diodes with state-of-art single-pulse avalanche energy density by adopting recessed anode and termination regions structures have been demonstrated. With effective alleviation of avalanche current crowding effect at the boundary, near uniform distribution of avalanche breakdown was achieved. During the avalanche reliability evaluation in the inductive load circuits, crucial avalanche capability with EAS is up to 10.7 J/cm². There are no parametric drift and device degradation after enduring more than 1 000, 000 repetitive clamping pulses were performed at EAS = 6.0 J/cm², showing great potential for high-power and high-reliable power conversion.