Transient Nanostructure Formation in GaAs Film Under Femtosecond Laser Action | IEEE Conference Publication | IEEE Xplore

Transient Nanostructure Formation in GaAs Film Under Femtosecond Laser Action


Abstract:

We present a self-consistent model computing the conduction band electron concentration, the electron and lattice temperatures of GaAs film on substrate during the action...Show More

Abstract:

We present a self-consistent model computing the conduction band electron concentration, the electron and lattice temperatures of GaAs film on substrate during the action of femtosecond laser pulse. Upon illumination with a high-power tightly focused laser pulse the transient modulation of GaAs properties can produce a “transient metallic nanoparticle”.
Date of Conference: 11-16 September 2023
Date Added to IEEE Xplore: 26 October 2023
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Conference Location: Chania, Greece

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