Design of a 22-55 GHz SPDT Switch MMIC with GaAs PIN Diodes

Design and measured performance of a mmWave reflective SPDT switch MMIC with vertical RF PIN diodes on GaAs are presented. The switch design uses a modified double shunt topology with distributed switching elements to extend the bandwidth beyond the limitations of the classic shunt topology. The bias feed and filtering network is integrated on-chip. The RF transitions are implemented with hot vias to a PCB to which the MMIC is mounted with silver epoxy. In the $22-55 \mathrm{GHz}$ frequency range, the measured insertion loss is less than $1 \mathrm{~dB}$, return loss is better than $15 \mathrm{~dB}$, and the isolation is greater than $40 \mathrm{~dB}$.