A kind of X-band Energy Selective Surface for High Density Radiation Field Protection

In order to protect sensitive electronic equipment working at high-frequency bands from the threat of High-Intensity Radiated Field (HIRF), a novel ESS with three-layer structures loaded diodes is proposed which can work in X-band. The top and bottom structures correspond to TE polarization and TM polarization, respectively. When the diode is turned off, the ESS like a bandpass filter and the 1 dB passband is 8.5 GHz to 13 GHz, which can ensure that small signals can pass with low insertion loss. On the contrary, when the diode is triggered to turn on by external HIRF, the ESS becomes a bandstop filter in X-band to isolate high-power energy and the shielding effectiveness is greater than 10 dB.