Influence of radiation on current-voltage characteristics of CaF/sub 2//Si heterostructures

Structures Al/CaF/sub 2//Si has been grown by method of the molecular-beam epitaxy (MBE) with thickness of film CaF/sub 2/ from 0.1 up to 0.5 /spl mu/m. Current-voltage characteristic (CVC) of Al/CaF/sub 2//Si structures before and after influence of radiation has been presented. It has been shown that the radiation has increased a current, but has not changed the mechanism of conductivity.