The 3D-model of anisotropic conductivity in the strained n-silicon

In paper the outcomes of 3-dimensional simulation of an anisotropic electrical conductivity originating at deformation of n-silicon are reduced. Is shown, that the application of the space 19-dot template of digitization allows to take into account changes x-, y-, and z-components of field strength in all three space directions. As an example the dependences of an output voltage transversal sensor of a unit from monoaxial mechanical power are presented.