Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals

Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the performance of the tunnel field effect transistors (TFETs). In this article, the transport properties of monolayer blue phosphorene (BP) and transition metals Ag or Mn decorated BP 5-nm TFETs along the armchair edge (AE) or zigzag edge (ZE) transport directions were studied by using density functional theory and non-equilibrium Green’s function formalism. The transfer charges between metal atoms and BP will induce the new energy bands to modulate the band structure of BP effectively. The ON-state currents of monolayer BP TFET are just 113 and
$77~\mu \text{A}/\mu \text{m}$
along the AE or ZE transport directions. The adsorption Mn atom can induce band gap states, and ON-state currents of Mn-decorated TFET along the AE or ZE transport directions can be improved to 616 and
$646~\mu \text{A}/\mu \text{m}$
, respectively. Although the band gap states induced by adsorbed Ag atom are less than those induced by adsorbed Mn atom, ON-state currents of Ag-decorated TFET along the AE or ZE transport directions could reach to 972 and
$1308~\mu \text{A}/\mu \text{m}$
, which both meet the requirement of high performance (HP) logic applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS). In addition, ON-state currents of Ag-decorated TFET including phonon-assisted tunneling along the AE and the ZE transport directions further increase to 1003 and
$1823~\mu \text{A}/\mu \text{m}$
, and better meet the HP requirements in ITRS.