A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications

The work presents a novel wavy channel nanosheet field effect transistor (WCNSFET) and its circuit-level performance. In this work, a single nanosheet is transformed into a wave-like structure to enhance the physical device area, thus showing an improvement in device performance. The device and circuit level performances are analyzed using 3D TCAD simulation tools. Furthermore, the wavy channel nanosheet FETs are analyzed with different number of waves in a single sheet and compared with flat sheet-based transistors for different channel materials (Ge and GaAs). The results reveal the improvement in drive current, low propagation delay, a smooth voltage transfer characteristic, high noise margin, and low energy. The results achieved with this novel device make the device a promising candidate for next-generation low power CMOS applications.