Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field

Current passing in the forward direction through a GaAs-based heterojunction at liquid helium temperatures exhibits, under a strong magnetic field applied parallel to the junction plane, regular fluctuations. We argue that these fluctuations are associated with the formation of closed Aharonov-Bohm-type orbits encircling misfit dislocations generated at the interface in which the current carriers are temporarily trapped.