Schottky behaviour of Pd//spl beta/-SiC junctions

Pd//spl beta/-SiC Schottky junctions using both epilayer and bulk SiC were fabricated and characterised by current-voltage (I-V) measurements. The effect of operating temperature on IN characteristics was studied. The ideality factor improved considerably at higher temperature. Annealing of Pd//spl beta/-SiC Schottky junctions at 400/spl deg/C improved the junction characteristics, which deteriorated at 800/spl deg/C due to degradation of Al/SiC ohmic contacts. These junctions are suitable for gas sensor applications at elevated temperatures.