A comparison of CMOS and BJT RF-LNAs

A simulation comparison of MOSFETs low noise amplifier (LNA) versus BJT LNA is proposed using a Pspice simulator. The MOSFET LNA was simulated and designed with a 0.5 /spl mu/m CMOS MOSIS process. It was concluded that the use of low-cost and high integration CMOS technology results in a penalty in the power dissipation and frequency response which are much better in bipolar technology. The comparison is performed at an operating frequency of 1.0 GHz.