A Universal Core Surface-Potential Modeling Methodology for Future Heterogeneous AOS/Si Co-integrated Design

A universal core surface potential modeling methodology is proposed to obtain the continuous explicit solutions to Poisson equation for future heterogeneous AOS/Si co-integrated design, without the necessity to solve implicit equations by numerical iteration or the table lookup method as previous work. This method is compatible to devices with various structures and different channel materials. In this paper, it has been successfully applied to Bulk MOSFET, SOI MOSFET and IGZO-based MOSFET. The fully analytical solutions of the surface potential will contribute to compact expressions of drain current, terminal charge and capacitance, incorporating physics-based and structural parameters. Thus, such a unified high accuracy and efficiency methodology is suitable for surface potential compact model towards future multi-functional heterogeneous integrated circuit design.