Analysis of the impact of modifications on the performance of graphene nanoribbon field effect transistors

The graphene-based transistors are considered as the potential candidates for low-power design for future nanoelectronics application. In this paper, graphene nanoribbons (GNRs) and graphene nanoribbon field effect transistors (GNRFET) are studied by simulation. The band structure and electronic properties of graphene nanoribbons under different chirality are simulated using tight binding theory. Then, based on the theoretical framework of non-equilibrium Green’s function, the electronic and transport characteristics of double-gate (DG) armchair GNRFET are studied with the change of device structural parameters such as AGNR chirality, gate oxide thickness and dielectric constant. Moreover, the device performance metrics such as subthreshold slope and drain induced barrier lowering (DIBL) effect are analyzed emphatically. This work presents an advance in the understanding of the GNRFET structure with important implications toward the device design.