Hydrogenated VO2 Bits for Probabilistic Computing

The stochastic nature of electronic phase transitions can serve as a random number generating source. This work reports probabilistic bits (
${p}$
-bits) based on hydrogen-doped vanadium oxide (H-VO2) devices with tunable insulator-metal transition (IMT) characteristics. Hydrogen donor doping reduces ground state resistance and enables control over threshold switching voltage in the post-fabricated devices. Through a paired-pulse scheme, the H-VO2 devices could generate stochastic bit sequences with adjustable switching probabilities. The sequence with a
${p}$
-bit value of 0.488 could pass 14 out of 15 National Institute of Standards and Technology (NIST) random and pseudorandom number generator tests.