Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.