An analytical AlGaAs MODFET charge control model for computer aided design applications

An analytical charge control model for AlGaAs MODFETs is developed. The model has two regions: linear, represented by a linear correspondence, and saturation, represented by an exponential function. A DC model for the device I-V characteristics is developed. The parasitic current from the doped layer of the channel is considered. The velocity saturation of the charges is accounted for, and the saturation drain-source voltage is accurately determined. This model can provide accuracy without sacrificing simplicity. The model has been successfully implemented in SPICE program.<>