GaAs digital integrated circuits-a review from silicon point of view for designing ultra-fast VLSI circuits

High-performance systems designed from silicon VLSI technology limited in speed performance could be designed from GaAs technology due to its high electron mobility, large saturation drift velocity at lower field strengths, high intrinsic bulk resistivity, strong radiation resistance, broad operating temperature range, and integration of electronics and optics. Various aspects of GaAs design and technology are reviewed from this point of view. Circuit design approaches, logic families, and the choice of design methodology are discussed.<>