Lithographic Performance and Insulation Reliability of a Novel i-Line Photosensitive Dielectric Material

In this study, we developed a novel negative-tone i-line photosensitive dielectric material (PSDM) with fine resolution and high insulation reliability. We achieved 0.7 micrometer L/S patterns with an aspect ratio of 3.7 using an i-line stepper with a numerical aperture (NA) of 0.5. We simulated the depth of focus (DOF) at NAs of 0.5 and 0.24 and obtained a PSDM with a wider DOF at an NA of 0.24. Further, we developed a test vehicle with 1 micrometer L/S patterns using the semi-additive process and evaluated the insulation reliability using a biased highly accelerated stress test (BHAST). The resistance was 100 megaohm after 200 h of the BHAST.