SPICE model of a “n” channel MOSFET transistor

In this paper, starting from a new equivalent circuit of a real n-channel MOS-FET transistor realized based on principle of operation and considering the information from datasheet, a new SPICE model is created, where the drain-source resistance of the transistor varies with base-source voltage and with temperature. To verify the accuracy of the SPICE model, a comparison of the SPICE model of a n-channel MOS-FET with the behavior of the real MOS-FET and with the SPICE behavior of the MOS-FET proposed by the component manufacturer will be performed. Validation of the model is performed at a temperature of −40°C, 25°C and 125°C. The following parameters of the “n” channel MOS-FET transistor are validated: parasitic capacitance from the gate, ON time, RISE time, OFF time, FALL time, the drain-source loss current, drain-source breakdown voltage, gate-source breakdown voltage and drain-source resistance.