A High-Power GaAs Amplifier With Coupled Bonding-Wires-Based Harmonic Control Output Matching Network

This letter presents a 2.45 GHz power amplifier (PA) with coupled bonding-wires-based harmonic control output matching network (OMN) using gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) technology. The proposed four-mutual coupled bonding-wires tune the impedance of the second harmonic to improve the efficiency of PA and achieve the low-loss matching of the fundamental impedance. In addition, the model of the coupled bonding-wires is analyzed in detail mathematically and numerically to optimize the output matching. Based on the proposed harmonic control OMN with four-coupled bonding-wires, a three-stage PA is designed and fabricated, achieving a power-added efficiency (PAE) of 37.5% with a 32.8 dBm saturated power (
${P} _{\mathbf {SAT}}$
). For a 20 MHz 64-QAM signal, the measured error vector magnitude (EVM) is 3.15% with 16.4 dBm average output power.