Abstract:
In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs) with a sputtered AlScN gate dielectric, exhibiting a large memory window of ~ 1...Show MoreMetadata
Abstract:
In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs) with a sputtered AlScN gate dielectric, exhibiting a large memory window of ~ 14.6 V and a high on/off ratio of \sim ~10^{{8}} . The strong polarization of AlScN layer contributes to the remarkably large threshold voltage ( \text{V}_{\text {th}}{)} tuning range with counterclockwise hysteresis depending on voltage sweep ranges and pulsed parameters. Moreover, a recessed-gate structure enables the pulsed enhancement and depletion mode switching. The reconfigurable Vth via pulse modulation further allows feasibility of NOR logic gate with the single ferroelectric GaN HEMT.
Published in: IEEE Electron Device Letters ( Volume: 44, Issue: 8, August 2023)