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Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric | IEEE Journals & Magazine | IEEE Xplore

Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric


Abstract:

In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs) with a sputtered AlScN gate dielectric, exhibiting a large memory window of ~ 1...Show More

Abstract:

In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs) with a sputtered AlScN gate dielectric, exhibiting a large memory window of ~ 14.6 V and a high on/off ratio of \sim ~10^{{8}} . The strong polarization of AlScN layer contributes to the remarkably large threshold voltage ( \text{V}_{\text {th}}{)} tuning range with counterclockwise hysteresis depending on voltage sweep ranges and pulsed parameters. Moreover, a recessed-gate structure enables the pulsed enhancement and depletion mode switching. The reconfigurable Vth via pulse modulation further allows feasibility of NOR logic gate with the single ferroelectric GaN HEMT.
Published in: IEEE Electron Device Letters ( Volume: 44, Issue: 8, August 2023)
Page(s): 1260 - 1263
Date of Publication: 20 June 2023

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