Stopper-less hybrid low-k/Cu DD structure fabrication combined with low-k CMP

We demonstrated a stopper-less hybrid of low-k/Cu dual damascene using organic (k=2.65) and inorganic low-k (k=2.6) films for a 0.13-/spl mu/m node to obtain lower effective k and good planarization. An inorganic low-k CMP and dual hard mask process were used. This process had good etching selectivity, a low RC value, and good via yield, and in the case with inorganic low-k CMP, no metal residue remained in the multi-layered structure. Using these technologies, a 5-layered hybrid structure was established.