Via first dual damascene integration of nanoporous ultra low-k material

In this paper, ISMT reports on the first successful integration of a porous ultra low-k dielectric in a via first/trench last dual damascene structure. The porous dielectric was a spin on siloxane based material with k/spl sim/2.2. Cap layer optimization for CMP, resist strip, clean, and electrical results from single and dual damascene integration are discussed.