Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3 /spl mu/m and 1.55 /spl mu/m [lasers]

Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460/spl deg/C, with a photoluminescence emission close to 1.6 /spl mu/m. Also reported is a PL result amongst the best, as compared with the literature.