Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy

Vertical GaN-on-GaN Schottky barrier diode (SBD) fully grown by hydride vapor phase epitaxy (HVPE) was first demonstrated in this article. Due to the low-carbon impurity concentration grown by HVPE, the field effective mobility has been increased from 734 to 1188 cm
$^{{2}}\cdot \text{V}^{-{1}}\cdot \text{s}^{-{1}}$
. The fabricated device with this technology shows a low turn-on voltage of 0.52 V and a high
${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$
ratio of
$7.1\times 10^{{9}}$
. The specific ON resistance
${R}_{ \mathrm{\scriptscriptstyle ON}}$
was 1.69
$\text{m}\Omega \cdot $
cm
²
at the current density of 500 A/cm
²
. High breakdown voltage
${V}_{\text {BR}}$
of 1370 V was achieved using He implantation technology. Among the reported vertical GaN SBDs with an indicated anode size, the highest figure of merit (FOM) (
${V}_{\text {BR}}^{{2}}/{R}_{ \mathrm{\scriptscriptstyle ON}}{)}$
of 1.1 GW/cm
²
has been achieved to date.