Innovative Leakage Stabilization System for Mitigation of Ionizing Radiation-Induced Effects

In this letter, a novel radiation leakage stabilization circuit (LSC) using Semi-Conductor Laboratory (SCL) 180-nm metal oxide semiconductor capacitor technology-based ionizing radiation sensor is proposed. The LSCs effectiveness at reducing radiation-induced effects is evaluated using cadence virtuoso-based simulation and it demonstrates that it requires significantly less area than a conventional modular redundancy. The proposed LSC is entirely compatible with current commercial SCL 180-nm technology fabrication techniques. In comparison to a typical 180-nm inverter, the proposed LSC incorporation has reduced the voltage transfer curve (VTC) shift by a factor of 98.5% for up to 1-Mrad radiation exposure. The proposed sensor and the LSC scheme were designed using commercial SCL 180-nm complementary metal-oxide semiconductor technology. This technology has advanced significantly. As a result, its stability and reproducibility have already been proven. Even at temperatures as high as 425
$^{\circ }$
C, it has been discovered that capacitive radiation sensors are inherently reliable and stable. The capacitive radiation sensor used in LSC for the detection of ionizing radiation is designed, simulated, and validated using Cogenda Visual Technology computer-aided design (TCAD). Considering threshold shift as a sensitivity parameter, the sensor's sensitivity for 0–10 krad is 20 mV/krad, 10–100 krad is 3.9 mV/krad, and 100 krad–1 Mrad is 0.6 V/krad.