Analysis of FDSOI-Negative Capacitance MOSFET with Respect to Different Oxide Thickness and Temperatures

Our research focuses on the study of Fully Depleted Silicon on Insulator Negative Capacitance Metal-Oxide-Semiconductor Field-Effect Transistors (FDSOI-NC-MOSFET) characteristics. This study aims to use ferroelectric material to improve the performance and efficiency of FDSOI Negative capacitance MOSFETs compared to conventional planar MOSFETs. Using TCAD software, FDSOI-NC-MOSFET is simulated and analyzed under various conditions and parameters (like Temperature, channel thickness, input supply voltages, and doping levels of the channel). Variations in these parameters will affect the operating region of the device, thereby the choice of parameters in achieving the best performance will depend on the operating conditions and device applications. NC-MOSFET with ferroelectric materials can obtain an acceptable ON/OFF current ratio by lowering the OFF current and can achieve an adequate subthreshold swing (SS). It is observed that the NC-MOSFET device has enhanced performance and transfer characteristics in comparison to planar MOSFET and is being studied further for various other parameter adjustments to reach a more optimal result. Later in this paper, a circuit-level design using NCMOSFET device is implemented and simulated in support of future circuit-level digital logic design applications.