Performance enhancement Of GaAs and InP Based Multi-Junction Silicon Solar Cells using thickness and doping profile optimization

Among all the non-conventional sources of energy, solar energy has become increasingly popular in recent years. While there are several types of solar energy technologies available, including solar thermal and concentrated solar power but solar photovoltaic (PV) is the most widely used and preferred form. Due to this reason, increasing the efficiency of the solar cell is one of the key factors for establishing the PV technology as a primal source of energy. So multi-junction solar cell with proper bandgap matching is one of the best ways to achieve high efficiency through improving open circuit voltage and unified photon electron harvesting in a broad area of the spectrum. This paper is about the design and analysis of GaAs-Si and InP-Si based two types of multi-junction solar cells with the efficiency of 18 and 20 % respectively by optimizing doping profile and materials thickness through PC1D software. By utilizing PC1D software, we can design and analyze the performance of the solar cells in a virtual environment before producing physical prototypes, which can help to save time and resources.