Abstract:
With the advent of WBG device like GaN and SiC, frequency has been pushed to very high in order to achieve the higher power density. Consequently, switching loss becomes ...Show MoreMetadata
Abstract:
With the advent of WBG device like GaN and SiC, frequency has been pushed to very high in order to achieve the higher power density. Consequently, switching loss becomes a large part of device loss in high-frequency applications. Traditional double pulse test method is not suitable for measuring the switching loss of GaN or SiC device with very high turn-off speed. In this paper, a converter-based switching loss measurement method is proposed and demonstrated. By analyzing the total loss breakdown and measuring each component precisely, the switching loss can be calculated accurately. Using this method, the switching loss of the 600V GaN device is evaluated in soft switching up to MHz.
Date of Conference: 19-23 March 2023
Date Added to IEEE Xplore: 31 May 2023
ISBN Information: