Nanocrystalline Heterojunction Device Fabrication and Characterization using CdSe

This article describes the synthesis, fabrication, and analysis of two heterojunction devices based on low-cost CdSe nanocrystalline thin films that have undergone solution processing. A schottky diode is created utilizing a PVA-capped n-CdSe thin film on an aluminium substrate, and a diode structure of CdSe/InSe/Al is obtained on indium coated glass substrates using the chemical bath deposition approach. Diffraction analysis and TEM studies reveal that the deposited thin films have a zinc mix structure that is nanocrystalline in nature. The response of InSe/CdSe diode has been investigated using forward bias current measurements at room temperature under dark and illumination conditions. Accordingly, ideality factor, built-in voltage, breakdown voltage, saturation current and breakdown current of the diode has been calculated. Acoustical and capacitance-voltage properties of Al/PVA:n- CdSe schottky diode has been studied at room temperature. Under reverse bias voltage, it has been possible to calculate a number of characteristics, including carrier concentration, built-in voltage, barrier height, and depletion layer width.