Photo-electric Characteristics Analysis of Quantum Corrected Strained Nanowire Drift-Diffusion Model based Si/Si0.98C0.02 Asymmetrical Super-lattice Near Infrared Photo-detector

In this paper strained asymmetrical Si/Si
0.98
C
0.02
Superlattice Nanowire (S-SL-Si/SiCNW) Near Infrared PhotoDetector has been designed on Si substrate for enhancement of the device performance in terms of photo-responsivity and quantum efficiency. The performances of the proposed device are studied by developing the Quantum Corrected Strained Nanowire Drift-Diffusion (QCSNDD) model Coupled with PSpice simulator. The active i-region of the proposed device consist of alternate narrow film strained Si layer and thick film of strained Si
0.98
C
0.02
layer. The mechanical and electrical properties of the Device under Test (DUT) are enhanced significantly by incorporating strained nanowire Si /Si
0.98
C
0.02
material in the active region of the DUT. For the first time, the authors report remarkable performance of the exotic Si/Si
0.98
C
0.02
pin photo-detector in near infrared region. The proposed QCSNDD model is validated by comparing the simulation result with the experimental result under similar operating conditions.