Development of High-Density Metal-Insulator-Metal Capacitors with Top and Side Contacts

This paper presents newly developed four-plate MIM capacitors with both top and side contacts; atomic layer deposited HfO2-Al2O3 high-k dielectrics with PVD TiN electrodes; capacitor density > 70 fF/μm² with reliability requirement of Vmax > 1.98 V; Wafer level mechanical strength assessment (MELT/DCB/SPST). With further high-k dielectric engineering, MIM capacitors are achieved with capacitor density of 86 fF/μm² or Vmax > 2.75 V. The enablement of these four-plate MIM capacitors empowers GlobalFoundries a full spectrum of up to date MIM offerings with both top and side contacts, in addition to existing general two-plate and more advanced three-plate MIM capacitors.