Ultralow RDS(ON) N- and P-Channel DMOS Power Transistors

This paper describes a new power MOSFET technology which permits the fabrication of n-channel and p-cbannel devices with ultra-low on-resistance. The first devices available in this family of complementary 50 V transistors are a 12 mΩ n-channel and a 30 mΩ p-channel transistor. The saturation current of the n-channel transistor exceeds 250 A. An additional benefit of the device geometry is its excellent high-speed operation. The new device was designed for applications that require pulsed high currents, such as synchronous rectification, complementary Η-bridge motor drives, and high-voltage emitter switching.