ESD protection of RF circuits in standard CMOS process

The tradeoffs in the ESD protection device for RFCMOS circuits are described, and the characteristics of an SCR-based ESD structure are presented. The parasitic capacitance of the ESD structure is reduced to /spl sim/150 fF. 3 kV HBM and 750 V CDM are achieved in a LNA working at 2.5 GHz with NF<4dB, applicable for Bluetooth wireless transceiver.