GTO-Thyristor with Improved Switching Behaviour

To achieve efficient turn-off of GTO-thyristors, presently two different techniques are applied: i. strong reduction of carrier lifetime by introducing recombination centers and ii. anode emitter shorting using narrow p emitter stripes. These methods are discussed with regard to their potential in improving switching properties. By combining anode shorts with carrier lifetime control, 1200 V, 50 A GTOs were developed which show reduced turn-off losses, lower gate turn-on and latching currents, and an improved temperature behaviour compared with available anode shorted or recombination center doped devices. Appropriate techniques for further improvements of GT0 frequency performance are discussed.