A High - Power Double - Interdigitated GTO Thyristor

The work reports the development of a high-voltage (2000 V), high-current (500 A) double-interdigitated gate turn-off (GTO) thyristor. The unique features of the novel high-power switch are dictated by the recently reported double-interdigitated or two interdigitation levels (TIL) gate-cathode configuration with a relatively coarse geometry. The active cathode area of the developed devices is 1.7 cm². The developed power switches could turn-off a load current of 500 A in about 20 µs with a turn-off gain Koff larger than 10. The gain Koff could be easily increased above 20 at the expense of the turn-off time. The devices possess a good turn-on sensitivity (IGT = 2.5 A; VGT = 1 V) accompanied by a high immunity to noise (dV/dt > 1 kV/µs).