Method To Implement Load Network for High-Efficiency Doherty Amplifier for 5G Application

In this work, a design of a 3-stage power amplifier with the final stage as a Doherty in Ka-band is presented, using the Gallium Arsenide (GaAs) p-HEMT process for 5G application. This amplifier achieves a 24.4 dB of small-signal gain, output power greater than 3W i.e., 34.8 dBm, over 39.2% of peak power added efficiency (PAE) at 1 dB compression, and PAE of 38.6% and 27.5^% are obtained at 3 dB, 6 dB back-off respectively in the frequency band of 26.5 - 27.5 GHz.