Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate for Emerging Terahertz Applications

This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga
2
O
3
substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga
2
O
3
as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga
2
O
3
substrates.