Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology

Soft error rates are predicted for the 3-nm bulk FinFET technology node using layout-informed Geant4 simulations and experimental data from the previous 7-nm and 5-nm bulk FinFET nodes. Single-event hit current and voltage transient characteristics are analyzed with literature-based models at the 7-nm, 5-nm, and 3-nm bulk FinFET nodes.