New extraction algorithm for GaAs-HBTs with low intrinsic base resistance

A new algorithm for extraction of the small-signal equivalent circuit elements of HBTs is presented. An analytical non-iterative approach is used in order to ensure physical significance of the extracted parameters. In order to enhance the robustness and reliability of the extraction routine, a simplified formula to determine the intrinsic base resistance R/sub b2/ Is presented. The new algorithm is verified by extraction of GaInP/GaAs HBT equivalent-circuit elements.