16 × 16 Solar-Blind UV Detector Based on β-Ga2O3 Sensors

In this work, a
${16}\times {16}$
Ga
₂
O
₃
photodetector array is introduced. The Ga
₂
O
₃
thin film was deposited on
${c}$
-sapphire substrate by employing metal-organic chemical vapor deposition, and the array device was constructed via UV photolithography, lift-off and electron-beam evaporation techniques. The high rejection ratio of
${8}\times {10} ^{{3}}$
indicate good wavelength selectivity. The photodetector displayed responsivity of 60.7 A W
⁻¹
, specific detectivity of
${2}.{2}\times {10} ^{{14}}$
cm
$\sqrt {\textit {Hz}}\,\,\text{W}^{-{1}}$
(Jones), external quantum efficiency of
${3}\times {10} ^{{4}}$
%, linear dynamic region of 120.34 dB, respectively. Excited by a laser, the photodetector had a rise time of 6 ms and a decay time of 48 ms, suggesting a fast response ability for tracing light signal. For the 256 pixels in this array, the dark current locates from 2 pA to 4 pA, and shown no disparity. More than 75% of the units have a maximum standard deviation of less than 10%. This work could show a guidance for advancing the solar-blind UV sensing devices and further applications.