Effect of Wfin, Hfin and Lg on the performance of 14-nm FinFET for analog and RF applications

FinFET devices have been popular for decades since their development due to their excellent gate-to-channel control, resulting in excellent immunity to short-channel effects (SCE). The 14nm silicon-on-insulator n-FinFET was designed and tested to accelerate the development of this rapidly evolving technology by evaluating the effect of different fin widths, fin heights and gate lengths on RF performance. The reported results allow for greater knowledge and deeper analysis into the consequences of modifying the parameters on device performance, thus allowing the manufacturing of the device to be customized as per the given requirements and demands. After analysis of the optimal results from various adjustments, we can have a significant increase in electrical properties from this novel device. This 14- nm Silicon-on-insulator (SOI) FinFET is designed and calibrated using Silvaco TCAD tools.