Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology

The paper describes a design and simulation of the differential driver for a dielectric resonator as an Application Specific Integrated Circuit for Ultra-Wideband (UWB) sensor systems. The driver was implemented in 130 nm SiGe BiCMOS technology from IHP Microelectronics. The circuit was designed for the parallel configuration of microstrip lines, with coupled cylindrical dielectric resonator between them. In the simulations, the circuit oscillated around required 21.75 GHz frequency with an equivalent dielectric resonator circuit. The wire-bond inductance influence on driver frequency and matching are simulated and explained. The power consumption of the oscillator is 25 mA at 2.5 V power supply. The maximum simulated singleended output amplitude achieves 660 mV
pp
.